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TK70D06J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS)
TK70D06J1
Switching Regulator Application
* * * * * * High-Speed switching Small gate charge: Qg = 87nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 80S Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 70 280 140 751 70 10.3 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-10V1A
Weight: 1.35 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.89 83.3 Unit C/W C/W
Internal Connection
2 1
Note 1: Ensure that the channel & lead temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C, L = 200 H, IAR = 70 A, RG = 1 Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care.
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TK70D06J1
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 35 A VOUT RL = 0.86 VDS = 10V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 35A VGS = 10 V, ID = 35A VDS = 10 V, ID = 35 A Min 60 45 1.1 40 Typ. 5.8 5.1 80 5450 320 1420 9 Max 10 10 2.3 7.6 6.4 pF Unit A A V V m S
10 V

ns

Turn-ON time Switching time Fall time
ton
VGS 0V
24
4.7
tf
VDD 30 V - Duty < 1%, tw = 10 s = VDD 48 V, VGS = 5 V, ID = 70A - VDD 48 V, VGS = 10 V, ID = 70A - VDD 48 V, VGS = 10 V, ID = 70A -
21

nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge
toff
106 47 87 16 19 30
Qg Qgs1 Qgd QSW

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. -1.0 60 51 Max 70 280 -1.2 Unit A A V ns nC
Marking
K70D06J 1
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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TK70D06J1
ID - VDS
100 Common source Tc = 25C Pulse Test 8 10 160 3.75 60 5 4.5 200 4 8 4.5 5
ID - VDS
4.25 Common source Tc = 25C Pulse Test 4
80
(A)
ID
ID
(A)
10 120
3.75
Drain current
40
3.5
Drain current
80 3.5 40 3.25 3 0 2 4 6 8 10
20
3.25 3 0 0.2 0.4 0.6 0.8 1.0
0
0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
200 1 Common source VDS = 10 V Pulse Test
VDS - VGS
Common source Tc = 25C Pulse Test
160
(V) VDS Drain-source voltage
0.8
ID (A)
120
0.6
Drain current
80 100 25 40 Tc = -55C 0
0.4
ID = 70 A
0.2
35 18
0
1
2
3
4
5
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
Common source VDS = 10 V Pulse Test
RDS (ON) - ID
100
100 Tc = -55C 25 100
Drain-source ON resistance RDS (ON) (m)
1000
Forward transfer admittance Yfs (S)
Common source Tc = 25C Pulse Test
10 VGS = 4.5 V 10
10
1 0.1
1 1 10 100 1000
1
10
100
Drain current ID (A)
Drain current ID (A)
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TK70D06J1
RDS (ON) - Tc
20
IDR - VDS
1000 Common source Tc = 25C Pulse Test
Drain-source ON resistance RDS (ON) (m)
16 ID = 70 A 35 18
Drain reverse current IDR (A)
Common source VGS = 10 V Pulse Test
300
100
10 3 5
12
30
8 VGS = 4.5V 4 VGS = 10V
70 35 18
10 1 0
3
0 -80
-40
0
40
80
120
160
1 0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 Ciss 5
Vth - Tc
Common source VDS = 10 V ID = 1mA Pulse Test
Gate threshold voltage Vth (V)
4
(pF)
Capacitance C
3
1000
Coss
2
100 0.1
Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10
Crss
1
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc (C)
PD - Tc
200 100
Dynamic input / output characteristics
Common source ID = 60 A Ta = 25C Pulse Test 60 30 15
ID = 60 A 30 15 20
PD (W)
(V)
80
16
150
VDS
Drain power dissipation
60 VDS 40 VDD = 12V 48V VGS 24V
12
100
Drain-source voltage
8
50
20
4
0 0
40
80
120
160
200
0
0
20
40
60
80
0 100
Case temperature Tc (C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
TK70D06J1
rth - tw
10
Normalized transient thermal impedance rth (t)/rth (ch-c)
1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 0.89C/W 1m 10m 100m 1 10
100
Pulse width
tw (s)
SAFE OPERATING AREA
1000 100 s * 1 ms * 1000
EAS - Tch
EAS (mJ) Avalanche energy
ID max (pulse) * 100 ID max (continuous)
800
Drain current ID (A)
600 10 DC OPEATION Tc = 25C 1
400
200
0.1
Single pulse Ta=25 Curves must be derated linearly with increase in temperature. VDSS max
0 25
50
75
100
125
150
Channel temperature (initial)
100
Tch (C)
0.01 1 10
Drain-source voltage
VDS (V)
20 V -5 V
BVDSS IAR VDD VDS
Test circuit
RG = 1 VDD = 25 V, L = 200 H
Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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